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Proceedings Paper

Process margin in ArF lithography using an alternating phase-shifting mask
Author(s): Takahiro Matsuo; Keisuke Nakazawa; Tohru Ogawa
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Paper Abstract

We have developed ArF excimer laser lithography using an alternating phase-shifting mask (PSM) for 0.10 micrometer device fabrication. The process margin and the requirement of phase accuracy were discussed for fabricating 0.10 micrometer patterns. We clarified the factor which have an influence on the resist process margin. It was found that the phase error has a great influence on the depth-of-focus (DOF), and the mask structures and the mask bias affect on the exposure latitude. The exposure latitude for the dual-trench type PSM reached over 1.3 times as large as it for the single-trench type. 0.10 micrometer patterns have been achieved with the DOF of 0.8 micrometer and the exposure latitude of 14% by optimizing the phase shift on the dual-trench type mask. Furthermore, the exposure latitude has been improved up to 16.5% by adding the mask bias of - 0.04 micrometer on the opaque area. By a feasibility study with the 10X dual-trench type masks, it was suggested that the phase accuracy of plus or minus 2 degrees was required for 0.10 micrometer pattern fabrication.

Paper Details

Date Published: 18 December 1998
PDF: 9 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332866
Show Author Affiliations
Takahiro Matsuo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Keisuke Nakazawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tohru Ogawa, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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