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Proceedings Paper

Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask through simulation I
Author(s): Robert John Socha; John S. Petersen; J. Fung Chen; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell
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Paper Abstract

Simulations for 140 nm, 170 nm, and 200 nm contacts were optimized on an 18% transmitting phase shift mask. A transmission of 18% is shown to have the most linear aerial image behavior through focus. The simulations were run using a primitive positive photoresist model in order to predict trends in resolution and to predict when side lobes begin printing. The contact hole design was optimized such that the process windows for various pitches overlap and the sidelobes are suppressed. By adding both opaque and clear sub-resolution assist features, the simulations show contacts as small as 140 nm resolve with 0.83 micrometer focus latitude and 2.00 mJ/cm2 exposure latitude for a pitch of 0.98 micrometer, and with 0.36 micrometer focus latitude and 0.50 mJ/cm2 exposure latitude for a pitch of 0.44 micrometer. Simulation shows that the serifs which create an effective contact bias also suppress side lobe printing. Vector simulation shows that the coupling between the electric and magnetic fields reduces the peak intensity and side lobe intensity.

Paper Details

Date Published: 18 December 1998
PDF: 25 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332861
Show Author Affiliations
Robert John Socha, National Semiconductor Corp. (United States)
John S. Petersen, SEMATECH (United States)
J. Fung Chen, MicroUnity Systems Engineering, Inc. (United States)
Thomas L. Laidig, MicroUnity Systems Engineering, Inc. (United States)
Kurt E. Wampler, MicroUnity Systems Engineering, Inc. (United States)
Roger F. Caldwell, MicroUnity Systems Engineering, Inc. (United States)


Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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