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Proceedings Paper

TiSi-nitride attenuating phase-shift photomask for 193-nm lithography
Author(s): Gillian A. M. Reynolds; Roger H. French; Peter F. Carcia; Charlie C. Torardi; Greg P. Hughes; David J. Jones; M. F. Lemon; M. H. Reilly; L. Wilson; C. R. Miao
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Paper Abstract

We have developed a new attenuating embedded phase-shift mask blank for 193 nm lithography based on novel TiSi-nitride chemistry. At 193 nm, these materials offer high optical transmission, they are radiation damage resistant, stable in common chemicals used to strip photoresist, process compatible with use of a hard Cr etch mask, and exhibit good dry etch selectivity to quartz. Specifically, optical transmissions of greater than 10% were achieved in films with 180 degree phase- shift. Irradiation at 6 mJ/cm2/pulse, or approximately 60x the energy densities in commercial steppers, caused small change in optical transmission for doses up to 2 kJ/cm2. Dry etching the films in an ICP reactor with CF4 gave a greater than 6:1 etch selectivity to quartz. Further, the novel wavelength-tunable structure of these TiSi-nitride films permits equally attractive phase-shift designs at 248 nm and longer wavelengths.

Paper Details

Date Published: 18 December 1998
PDF: 10 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332857
Show Author Affiliations
Gillian A. M. Reynolds, DuPont Central Research & Development (United States)
Roger H. French, DuPont Central Research & Development (United States)
Peter F. Carcia, DuPont Central Research & Development (United States)
Charlie C. Torardi, DuPont Central Research & Development (United States)
Greg P. Hughes, DuPont Photomasks, Inc. (United States)
David J. Jones, DuPont Central Research & Development (United States)
M. F. Lemon, DuPont Central Research & Development (United States)
M. H. Reilly, DuPont Central Research & Development (United States)
L. Wilson, DuPont Central Research & Development (United States)
C. R. Miao, DuPont Central Research & Development (United States)


Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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