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Proceedings Paper

New approach to optical proximity correction
Author(s): Anja Rosenbusch; Andrew C. Hourd; Casper A. H. Juffermans; Hartmut Kirsch; Frederic P. Lalanne; Wilhelm Maurer; Carmelo Romeo; Kurt G. Ronse; Patrick Schiavone; Michal Simecek; Olivier Toublan; John G. Watson; Wolfram Ziegler; Rainer Zimmermann
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Paper Abstract

A hierarchical rule based optical proximity effect correction approach is presented. The approach has been driven by maskmaking and production requirements to make OPC a practical problem solution. The model based rule generation is presented, as well as benchmark tests on different state-of- the-art test chips.

Paper Details

Date Published: 18 December 1998
PDF: 9 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332856
Show Author Affiliations
Anja Rosenbusch, Sigma-C GmbH (United States)
Andrew C. Hourd, Compugraphics International Ltd. (United Kingdom)
Casper A. H. Juffermans, Philips Research Labs. (Belgium)
Hartmut Kirsch, Sigma-C GmbH (United States)
Frederic P. Lalanne, CNET/SGS-Thomson Microelectronics (France)
Wilhelm Maurer, Siemens AG (United States)
Carmelo Romeo, SGS-Thomson Microelectronics (United States)
Kurt G. Ronse, IMEC (Belgium)
Patrick Schiavone, CNET (France)
Michal Simecek, Sigma-C GmbH (Germany)
Olivier Toublan, CNET (France)
John G. Watson, Rutherford Appleton Lab. (United Kingdom)
Wolfram Ziegler, Siemens AG (Germany)
Rainer Zimmermann, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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