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Proceedings Paper

Full-chip optical proximity correction using lithography simulation
Author(s): Graham G. Arthur; Brian Martin; Christine Wallace; Anja Rosenbusch; Huw Fryer
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Paper Abstract

The application of Optical Proximity Correction for improving uniformity of printed dimensions at sub-half-micron resolution in a 0.35 micron CMOS process is described. Results are presented in terms of measurements made on polysilicon gates, at different pitches, which are compared to the uncorrected case. The impact of photomask and stepper lens qualities on dimensional control are also considered. Results presented are at the demonstrator stage but strategy for implementation in production is discussed.

Paper Details

Date Published: 18 December 1998
PDF: 11 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332847
Show Author Affiliations
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)
Brian Martin, Mitel Semiconductor Ltd. (United Kingdom)
Christine Wallace, Mitel Semiconductor Ltd. (France)
Anja Rosenbusch, Sigma-C GmbH (United States)
Huw Fryer, Align-Rite Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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