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Proceedings Paper

Optical proximity correction for 0.15-um-rule memory devices
Author(s): Haruo Iwasaki; Hiroyoshi Tanabe; Takashi Inoue; Yoshiyuki Tanaka
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Paper Abstract

Optical proximity correction (OPC) is applied to the cell patterns of 0.15-micrometer-rule memory devices. Two kinds of memory cell patterns are studied. The first is a wire pattern which has small gaps between two wires. The small gaps can be clearly resolved by using OPC such as jogs or resizing. The second pattern is a storage node pattern which has a rectangular shape. The area of the storage node is enlarged by using OPC such as resizing, hammer heads or serifs. These OPC masks are successfully fabricated by using dry etching process.

Paper Details

Date Published: 18 December 1998
PDF: 9 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332838
Show Author Affiliations
Haruo Iwasaki, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)
Takashi Inoue, NEC Corp. (Japan)
Yoshiyuki Tanaka, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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