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Proceedings Paper

Masks for extreme ultraviolet lithography
Author(s): Stephen P. Vernon; Patrick A. Kearney; William M. Tong; Shon T. Prisbrey; Cindy C. Larson; Craig E. Moore; Frank J. Weber; Gregory Frank Cardinale; Pei-yang Yan; Scott Daniel Hector
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Paper Abstract

In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces -- including the mask. The EUV mask has a unique architecture -- it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state- of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed.

Paper Details

Date Published: 18 December 1998
PDF: 10 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332826
Show Author Affiliations
Stephen P. Vernon, Lawrence Livermore National Lab. (United States)
Patrick A. Kearney, Lawrence Livermore National Lab. (United States)
William M. Tong, Lawrence Livermore National Lab. (United States)
Shon T. Prisbrey, Lawrence Livermore National Lab. (United States)
Cindy C. Larson, Lawrence Livermore National Lab. (United States)
Craig E. Moore, Lawrence Livermore National Lab. (United States)
Frank J. Weber, Lawrence Livermore National Lab. (United States)
Gregory Frank Cardinale, Sandia National Labs. (United States)
Pei-yang Yan, Intel Corp. (United States)
Scott Daniel Hector, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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