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Proceedings Paper

Compatibility of CD-SEM metrology with advanced e-beam resists
Author(s): Waiman Ng; Geoffrey T. Anderson; Suzanne Weaver; Homer Y. Lem
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Paper Abstract

There is an industry drive by the photomask manufacturers to produce reticles with tighter tolerances to satisfy the demand of the silicon wafer manufacturers. New processing and metrology techniques must be employed to attain these tighter specifications. This paper examines the feasibility of using low voltage CD-SEM metrology to gauge and optimize advanced e- beam resist processes. This paper presents SEM images, data and analysis of the metrology characterization results for ZEP and PBS e-beam resists. Strategies to minimize e-beam exposure dose during the measurement process will be discussed. Measurement precision and carry over effects will be presented and compared for both PBS and ZEP. This paper will demonstrate the suitability of using a CD-SEM in the metrology of developed ZEP resist, and show that an acceptable level of damage to the PBS resist can be attained.

Paper Details

Date Published: 18 December 1998
PDF: 5 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332820
Show Author Affiliations
Waiman Ng, KLA-Tencor Corp. (United States)
Geoffrey T. Anderson, KLA-Tencor Corp. (United States)
Suzanne Weaver, Etec Systems, Inc. (United States)
Homer Y. Lem, Etec Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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