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Proceedings Paper

MoSi PSM defect inspection and sensitivity analysis
Author(s): Jerry Xiaoming Chen; Robert K. Henderson; Franklin D. Kalk
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Paper Abstract

The increasing use of MoSi-based attenuated embedded shifter phase shift masks (PSMs) necessitates MoSi defect inspection and classification. The optical properties of MoSi are quite different than conventional Cr-based binary materials, so inspection tool sensitivity to MoSi defects must be characterized. Sensitivity analysis of a KLA 351 with APA algorithm has been performed on both i-line and DUV PSMs with a variety of Verithoro patterns. The programmed defect sizes were measured on a JEOL JWS-7815 SEM that was calibrated with polystyrene latex spheres for defect sizes less than or equal to 0.4 micrometer, yielding a more accurate small defect sensitivity analysis than in the past. Examples of MoSi defect capture and review are also presented.

Paper Details

Date Published: 18 December 1998
PDF: 11 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332816
Show Author Affiliations
Jerry Xiaoming Chen, DuPont Photomasks, Inc. (United States)
Robert K. Henderson, DuPont Photomasks, Inc. (United States)
Franklin D. Kalk, DuPont Photomasks, Inc. (United States)


Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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