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Proceedings Paper

X-ray optics of in-situ synchrotron topography studies of the early stages of relaxation in epitaxial InGaAs on GaAs
Author(s): Brian K. Tanner; Andrew M. Keir; Peter Moeck; Colin R. Whitehouse; Gareth Lacey; Andrew D. Johnson; Gilbert W. Smith; Graham F. Clark
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Paper Abstract

High resolution X-ray topography and diffraction measurements have been made at the Daresbury Synchrotron Radiation Source during in-situ molecular beam epitaxial growth of InGaAs on GaAs. Critical analysis of dislocation contrast, intensity and geometrical distortion reveals that use of the 224 reflection in the Bragg geometry at 1.48 Angstrom wavelength is optimal for such double crystal topography experiments. Examination of the beam-conditioner characteristics and performance had resulted in use of the 333 reflection from a channel-cut silicon crystal as a monochromator. We deduce and show experimentally that a 004 channel-cut monochromator is optimal, resulting in significant reduction in exposure times. We present images of misfit dislocations showing evidence for the first time of phase contrast from lattice distortions.

Paper Details

Date Published: 11 December 1998
PDF: 8 pages
Proc. SPIE 3448, Crystal and Multilayer Optics, (11 December 1998); doi: 10.1117/12.332496
Show Author Affiliations
Brian K. Tanner, Univ. of Durham (United Kingdom)
Andrew M. Keir, Defence Evaluation and Research Agency Malvern (United Kingdom)
Peter Moeck, Univ. of Durham and Univ. of Oxford (United States)
Colin R. Whitehouse, Univ. of Sheffield (United Kingdom)
Gareth Lacey, Univ. of Sheffield (United Kingdom)
Andrew D. Johnson, Defence Evaluation and Research Agency Malvern (United Kingdom)
Gilbert W. Smith, Defence Evaluation and Research Agency Malvern (United Kingdom)
Graham F. Clark, Daresbury Lab. (United Kingdom)


Published in SPIE Proceedings Vol. 3448:
Crystal and Multilayer Optics
Albert T. Macrander; Andreas K. Freund; Tetsuya Ishikawa; Dennis M. Mills, Editor(s)

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