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Proceedings Paper

Influence of dislocation on the performance of MBE Cd0,22Hg0,78Te photodiodes
Author(s): Larisa N. Romashko; Anatoly G. Klimenko; A. P. Kravchenko; Victor N. Ovsyuk; V. G. Voinov; V. V. Vasilyev
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Paper Abstract

The investigation of MBE CdHgTe photodiode characteristics after pressure applying to n-type of junction has been carried out. The diodes parameters have been studied in the temperature range of 5 divided by 120 K. It was found that the mechanical stress causes the increase of traps amount with Et approximately equals Ev plus 0.043 eV and Et approximately equals Ev plus 0.032 eV. The energies of these traps have some temperature dependence. The diodes generation-recombination and trap-assisted tunneling currents significantly increase at forward and reverse biases. The value of RoA decreases in an order at T less than 60 K because of trap assisted tunneling via the dislocation levels. At high temperatures T greater than 60 K the value of RoA does not change and determined by the diffusion mechanism.

Paper Details

Date Published: 18 November 1998
PDF: 6 pages
Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998); doi: 10.1117/12.331320
Show Author Affiliations
Larisa N. Romashko, Institute of Semiconductor Physics (Russia)
Anatoly G. Klimenko, Institute of Semiconductor Physics (Russia)
A. P. Kravchenko, Institute of Semiconductor Physics (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics (Russia)
V. G. Voinov, Institute of Semiconductor Physics (Russia)
V. V. Vasilyev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 3437:
Infrared Spaceborne Remote Sensing VI
Marija Strojnik; Bjorn F. Andresen, Editor(s)

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