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Proceedings Paper

Asymmetric dark current in double-barrier quantum well infrared photodetectors
Author(s): Qiandong Zhuang; Jinmin Li; Lanying Lin
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Paper Abstract

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

Paper Details

Date Published: 18 November 1998
PDF: 5 pages
Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998); doi: 10.1117/12.331318
Show Author Affiliations
Qiandong Zhuang, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)
Lanying Lin, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3437:
Infrared Spaceborne Remote Sensing VI
Marija Strojnik; Bjorn F. Andresen, Editor(s)

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