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Proceedings Paper

Influence of ion implantation on the reflectance spectrum of HgCdTe
Author(s): Xiangyang Li; JianHua Zhao; Wenjuan Zhu; Runqing Jiang; Yueyuan Xia; Xiaoning Hu; Jun Zhao; Huiqin Lu; Xinwen Hu; Jiaxiong Fang
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Paper Abstract

An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.

Paper Details

Date Published: 18 November 1998
PDF: 5 pages
Proc. SPIE 3437, Infrared Spaceborne Remote Sensing VI, (18 November 1998); doi: 10.1117/12.331317
Show Author Affiliations
Xiangyang Li, Shandong Univ. (China)
JianHua Zhao, Shandong Univ. (United States)
Wenjuan Zhu, Shandong Univ. (China)
Runqing Jiang, Shandong Univ. (China)
Yueyuan Xia, Shandong Univ. (China)
Xiaoning Hu, Shanghai Institute of Technical Physics (China)
Jun Zhao, Shanghai Institute of Technical Physics (United States)
Huiqin Lu, Shanghai Institute of Technical Physics (China)
Xinwen Hu, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3437:
Infrared Spaceborne Remote Sensing VI
Marija Strojnik; Bjorn F. Andresen, Editor(s)

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