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Proceedings Paper

Residual stresses in Mo/Si and Mo2C/Si multilayers
Author(s): Tai D. Nguyen; Troy W. Barbee
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Paper Abstract

We report a study of the residual stresses and residual stress relaxation in Mo/Si and Mo2C/Si EUV multilayers. The multilayers were fabricated by magnetron sputter deposition, and stress measured using the substrate curvature laser scanning technique. It was found that Mo2C/Si multilayers exhibit higher compressive stress than Mo/Si of comparable period and layer thickness ratio. The multilayers sputtered at 0.5 mT Ar pressure have higher compressive stress than those sputtered at 2 mT Ar pressure. The data indicate that the residual stresses in the multilayers are primarily determined by the Si layers. Annealing of the multilayers at a heating rate of 5 degrees C/minute as well as at a fixed temperature results in a reduction of the compressive stresses. Near zero stress is achieved after annealing at 300 degrees C. The time dependence of the residual stress decrease during isothermal annealing was found to fit best to a bimolecular viscous flow model of defect annihilation in the amorphous Si layers. The relationships between the effects of annealing on the multilayer microstructure and the observed stress reduction are discussed.

Paper Details

Date Published: 19 November 1998
PDF: 8 pages
Proc. SPIE 3444, X-Ray Optics, Instruments, and Missions, (19 November 1998); doi: 10.1117/12.331274
Show Author Affiliations
Tai D. Nguyen, Lawrence Livermore National Lab. (United States)
Troy W. Barbee, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 3444:
X-Ray Optics, Instruments, and Missions
Richard B. Hoover; Arthur B. C. Walker, Editor(s)

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