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Proceedings Paper

Trap-emptying time in LT CdTe films determined by time-resolved reflectance near Brewster's angle
Author(s): Nicolas Breuil; Anne Ghis; A. Reineix; Bernard Jecko; Alain Barthelemy
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Paper Abstract

We have characterized the dynamic of carriers in photoconductors which are already located in microwave devices. We particularly examined the trapping time and trap emptying time of Low Temperature grown CdTe. A trapping time of 1.6 ps was found from both optoelectronic cross correlation and Time Resolved Reflectance measurements. Trap emptying time is usually investigated by pump and probe optical transmission technique that gives the dynamic of non linear absorption. We have used instead a new method called Time Resolved Reflectance Close to Brewster's Angle in order to study non linear absorption occurring in photoconductive material already processed in microwave structure. We developed a model to estimate the trap emptying time of LT CdTe. We found a trap emptying time of 0.58 ps which is lower than the trap time 1.6 ps. These parameters make CdTe a good candidate to optical/microwave conversion in high bit rate communications or as a sampling gate in a sample and hold circuits.

Paper Details

Date Published: 13 November 1998
PDF: 9 pages
Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); doi: 10.1117/12.331185
Show Author Affiliations
Nicolas Breuil, Institut de Recherche en Communications Optiques et Microondes (France)
Anne Ghis, Laboratoire d'Electronique, de Technologie et d'Instrumentation (France)
A. Reineix, Institut de Recherche en Communications Optiques et Microondes (France)
Bernard Jecko, Institut de Recherche en Communications Optiques et MicroondesUniv. de Limoges (France)
Alain Barthelemy, Institut de Recherche en Communications Optiques et MicroondesUniv. de Limoges (France)


Published in SPIE Proceedings Vol. 3465:
Millimeter and Submillimeter Waves IV
Mohammed N. Afsar, Editor(s)

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