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Proceedings Paper

Optoelectronic properties and characteristics of doping superlattices
Author(s): Valerii K. Kononenko; Ivan S. Manak; Dmitrii V. Ushakov
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Paper Abstract

Optical and electric properties of doping superlattices, or n-i-p-i crystals, can be varied in a wide range under excitation and through the choice of the thicknesses and doping of the crystal layers. Some basic results concerned the transformation of the electron energy spectrum of doping superlattices are summarized. Parameters and characteristics of doping superlattices related to optoelectronics devices, such as photodetectors, laser diodes, and optical modulators, are presented.

Paper Details

Date Published: 6 November 1998
PDF: 18 pages
Proc. SPIE 3580, Photoconversion: Science and Technologies, (6 November 1998); doi: 10.1117/12.330449
Show Author Affiliations
Valerii K. Kononenko, Institute of Physics (Belarus)
Ivan S. Manak, Institute of Physics (Belarus)
Dmitrii V. Ushakov, Institute of Physics (Belarus)


Published in SPIE Proceedings Vol. 3580:
Photoconversion: Science and Technologies
Maksymilian Pluta; Mariusz Szyjer, Editor(s)

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