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Proceedings Paper

Novel structure for dual-function electroabsorption waveguide modulator/phototransistor
Author(s): Dong-Soo Shin; Chen Kuo Sun; Wei-Xi Chen; Stephen A. Pappert; J. T. Zhu; Richard Nguyen; Yet Zen Liu; Paul K. L. Yu
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Paper Abstract

A novel npin waveguide structure for the dual-function electroabsorption modulator/detector is proposed and fabricated. With the addition of an n-layer to the conventional pin-structure, the device exhibits phototransistor behavior in the detector model. The device has an InGaAsP intrinsic layer with Franz-Keldysh electroabsorption at 1.3 micrometers wavelength. Preliminary results show optical gain in the detector mode and good modulator characteristics.

Paper Details

Date Published: 3 November 1998
PDF: 4 pages
Proc. SPIE 3463, Photonics and Radio Frequency II, (3 November 1998); doi: 10.1117/12.330400
Show Author Affiliations
Dong-Soo Shin, Univ. of California/San Diego (United States)
Chen Kuo Sun, Space and Naval Warfare Systems Ctr., San Diego (United States)
Wei-Xi Chen, Univ. of California/San Diego (United States)
Stephen A. Pappert, Space and Naval Warfare Systems Ctr., San Diego (United States)
J. T. Zhu, Univ. of California/San Diego (United States)
Richard Nguyen, Space and Naval Warfare Systems Ctr., San Diego (United States)
Yet Zen Liu, Fermionics Corp. (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 3463:
Photonics and Radio Frequency II
Gregory J. Zagar; Anastasios P. Goutzoulis; Andrew R. Pirich, Editor(s)

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