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Proceedings Paper

Characterization of a VPE gallium arsenide x-gamma-ray detector
Author(s): Giuseppe Bertuccio; D. Maiocchi; C. Rente; Arno Foerster; Hans Luth
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Paper Abstract

An x-(gamma) ray detector constituted by a 1 mm2 Schottky junction on Vapor Phase Epitaxy gallium arsenide is presented. The junction has been characterized by means of capacitance and current vs. voltage analyses, finding a good agreement with the theory. Thanks to the low impurity concentration of the undoped epitaxial layer, an active region depth of 20 micrometers is reached at 100 V bias voltage. A reverse current density of 18 nA/cm2 has been measured at 290 K in operating condition. The detector has been tested at room temperature with a 241Am X-(gamma) source; the pulser line shows 1.41 keV FWHM and the 59.54 keV line shows 1.47 keV FWHM, corresponding to an energy resolution of 2.5 percent.

Paper Details

Date Published: 10 November 1998
PDF: 8 pages
Proc. SPIE 3445, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, (10 November 1998); doi: 10.1117/12.330324
Show Author Affiliations
Giuseppe Bertuccio, Politecnico di Milano (Italy)
D. Maiocchi, Politecnico di Milano (Italy)
C. Rente, Institut fuer Schicht und Ionentechnik (Germany)
Arno Foerster, Institut fuer Schicht und Ionentechnik (Germany)
Hans Luth, Institut fuer Schicht und Ionentechnik (Germany)


Published in SPIE Proceedings Vol. 3445:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX
Oswald H. W. Siegmund; Mark A. Gummin, Editor(s)

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