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Proceedings Paper

Silicon pixel detector for x-ray spectroscopy
Author(s): Paul Seller; William J. F. Gannon; Andrew D. Holland; Gregory M. Iles; Barrie G. Lowe; Mark Lyndon Prydderch; Stephen L. Thomas; Richard Wade
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Paper Abstract

We have built a back-illuminated, silicon x-ray pixel detector which is bump bonded to an array of readout electronics. The system is intended for x-ray spectroscopy measurement in the 1 keV-25keV range with a resolution of 250eV FWHM. The readout electronics consists of an array of 16 by 16 preamplifiers on the bump bonded integrated circuit, this unit is wire bonded to two 128 channel integrated circuits which have signal shaping, peak-hold and sparcification logic. This paper describes the construction of the silicon detector, the readout electronics and the performance of these components. The energy range of the detector system can be increased by using a GaAs or CdZnTe detector instead of the 300 micrometers -500 micrometers thick silicon pixel detector described here.

Paper Details

Date Published: 10 November 1998
PDF: 9 pages
Proc. SPIE 3445, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, (10 November 1998); doi: 10.1117/12.330319
Show Author Affiliations
Paul Seller, Rutherford Appleton Lab. (United Kingdom)
William J. F. Gannon, Rutherford Appleton Lab. (United Kingdom)
Andrew D. Holland, Univ. of Leicester (United Kingdom)
Gregory M. Iles, Imperial College of Science, Technology and Medicine (United Kingdom)
Barrie G. Lowe, Oxford Instruments (United Kingdom)
Mark Lyndon Prydderch, Rutherford Appleton Lab. (United Kingdom)
Stephen L. Thomas, Rutherford Appleton Lab. (United Kingdom)
Richard Wade, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 3445:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX
Oswald H. W. Siegmund; Mark A. Gummin, Editor(s)

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