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Proceedings Paper

Etching characteristics of a chromium-nitride hardmask for x-ray mask fabrication
Author(s): Shinji Tsuboi; Miyoshi Seki; Katsumi Suzuki
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Paper Abstract

To achieve high-precision x-ray masks, we have developed an extremely low-stress chromium-nitride (CrN) film for use as a hardmask for x-ray absorber etching. We have fabricated 0.10-micrometers line-and-space patterns in a 0.4-micrometers -thick tantalum-germanium (TaGe) alloy x-ray absorber using a 75- nm-thick CrN hardmask. The CrN film was etched by reactive- ion etching using chlorine gas mixed with oxygen. The etching selectivity between the TaGe alloy and the CrN was 13 when using electron-cyclotron-resonance plasma etching with sulfur hexafluoride (SF6) gas. We have also investigated the durability of the CrN film to various acids which are widely used for silicon-wafer cleaning processes. The CrN etching rate for those acids was 3 nm/min or less. These results demonstrate that a sputtered CrN film is an excellent hardmask for precise x-ray mask fabrication.

Paper Details

Date Published: 1 September 1998
PDF: 6 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328855
Show Author Affiliations
Shinji Tsuboi, NEC Corp. (Japan)
Miyoshi Seki, NEC Corp. (Japan)
Katsumi Suzuki, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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