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Proceedings Paper

Mask technology of extreme-ultraviolet lithography
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Paper Abstract

EUVL employs a reflective mask consisting of a metallized pattern less than 100 nm thick on a state-of-the-art multilayer mirror deposited on a substrate. The key technologies needed for mask fabrication are coating equipment to make defect-free multilayer films and a low- damage mask fabrication process. Current repair and inspection technologies are advanced enough to handle a pattern size of 0.3 micrometers .

Paper Details

Date Published: 1 September 1998
PDF: 11 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328848
Show Author Affiliations
Hiroo Kinoshita, Himeji Institute of Technology (Japan)
Takeo Watanabe, Himeji Institute of Technology (Japan)
Akira Ozawa, NTT Advanced Technology Corp. (Japan)
Masahito Niibe, Himeji Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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