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Proceedings Paper

Status of x-ray mask development at the IBM Advanced Mask Facility
Author(s): Kenneth C. Racette
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Paper Abstract

IBM's Advanced Mask Facility in Essex Junction, Vermont, is responsible for the company's x-ray mask technology development and manufacturing. During the first half of 1997, this facility replaced the gold x-ray absorber with a refractory material in order to provide a greater compatibility between proximity x-ray masks and semiconductor manufacturing lines. Significant progress has been made to position x-ray masks are currently being delivered for advanced logic and memory applications. This paper discusses key process improvements such as the implementation of new deposition, annealing, etching and measurement equipment. Performance of critical parameters is presented, including the quality of substrates and absorber film stacks, image size and placement control, and defect density. The technology challenges and IBM's roadmap for application masks below 130nm are also provided.

Paper Details

Date Published: 1 September 1998
PDF: 7 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328846
Show Author Affiliations
Kenneth C. Racette, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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