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Proceedings Paper

Current focused-ion-beam repair strategies for opaque defects and clear defects on advanced phase-shifting masks
Author(s): Mark L. Raphaelian; J. David Casey Jr.; Andrew F. Doyle; David C. Ferranti; John C. Morgan
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Paper Abstract

Over the past several years, advanced photolithography has moved from 0.35 micrometers technology to 0.25 micrometers as the standard. Soon the technology will move into the 0.18 micrometers generation. Due to the ever-shrinking feature sizes on advanced photolithographic masks, phase shifting technology has been incorporated to improve resolution on the exposed wafer. On such masks the minimum phase error and the maximum percent transmission must be dealt with. These requirements have challenged the ability to repair masks with opaque and clear defects. The Micrion focused ion beam system currently repairs opaque defects found on advanced phase shifting chrome and molybdenum silicide masks. In this paper, Micrion discusses advanced repair techniques and strategies used to address the stringent requirements of matching phase and percent transmission at the repaired defect sites. Difficulties in opaque defect and clear defect repair strategies will be discussed.

Paper Details

Date Published: 1 September 1998
PDF: 12 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328841
Show Author Affiliations
Mark L. Raphaelian, Micrion Corp. (United States)
J. David Casey Jr., Micrion Corp. (United States)
Andrew F. Doyle, Micrion Corp. (United States)
David C. Ferranti, Micrion Corp. (United States)
John C. Morgan, Micrion Corp. (United States)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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