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Proceedings Paper

Development of a next-generation e-beam lithography system for 1-Gb DRAM masks
Author(s): Yasutoshi Nakagawa; Tadashi Komagata; Hitoshi Takemura; Nobuo Gotoh; Kazumitsu Tanaka
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Paper Abstract

A new electron beam lithography system for masks needed in production of 1Gbit DRAM devices was developed and evaluated. The system features a variable shaped beam, 50 kV accelerating voltage, and a step and repeat stage, and incorporates new technologies, including a high resolution high current density electron optical system, a per-shot beam correction unit, a high precision beam detection system utilizing the curve fitting method, and a single-stage 20 bit beam deflection unit. The initial evaluation confirmed a minimum line-width of 100nm, a line-width uniformity of 20 nm within a field, a total positional accuracy, including field stitching and in-field positional accuracy of 20 nm and an exposure speed 3 times faster than that of the existing model, JBX-7000MVII. It was thus verified that the new EB system is capable to produce masks needed for next generation devices including 1 Gbit DRAMs.

Paper Details

Date Published: 1 September 1998
PDF: 12 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328826
Show Author Affiliations
Yasutoshi Nakagawa, JEOL Ltd. (Japan)
Tadashi Komagata, JEOL Ltd. (Japan)
Hitoshi Takemura, JEOL Ltd. (Japan)
Nobuo Gotoh, JEOL Ltd. (Japan)
Kazumitsu Tanaka, JEOL Ltd. (Japan)


Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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