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Proceedings Paper

Subresolution assist feature masks for 0.2-um window pattern formation
Author(s): Tadao Yasuzato; Shinji Ishida; Hiroyoshi Tanabe; Akihiko Andou; Tatuya Kamata; Yoji Tonooka; Hiroyuki Shigemura
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Paper Abstract

An assist-feature mask was fabricated for 0.2 micrometers window pattern formations using a dry etching process. Although the mask's assist-features were as small as 0.68 micrometers , mask inspection was successfully carried out using the cell-shift method. In addition, defects in assist-features were repaired by use of a laser mask repair system. The lithographic performance of this assist-feature mask was compared with that of a conventional mask, using a 4x KrF excimer laser exposure tool and a 0.7 micrometers thick positive resist. The numerical aperture (NA) of the exposure tool was 0.55 and annular illumination was used. The depth of focus of the 0.2 micrometers window was improved from 0.4 to 0.6 micrometers . Moreover, it was confirmed that defects in the assist- feature have little influence on the focus latitude of the main pattern. The DOF of patterns repaired with this technique recovered to nearly the same as that of the no- defect pattern.

Paper Details

Date Published: 1 September 1998
PDF: 10 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328824
Show Author Affiliations
Tadao Yasuzato, NEC Corp. (Japan)
Shinji Ishida, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)
Akihiko Andou, NEC Corp. (Japan)
Tatuya Kamata, NEC Corp. (Japan)
Yoji Tonooka, NEC Corp. (Japan)
Hiroyuki Shigemura, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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