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Proceedings Paper

Optimization of ZEN4100(2)
Author(s): Noriyuki Mitao; Nobunori Abe; Masahiko Sugimura
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Paper Abstract

To reduce defect density in real reticles, it is important to control the quality of materials such as resist. In the development of electron beam resist for reticle making, we have tried to improve quality and performance of the resist materials. In this paper, we describe a new resist which has good stability for reticle making. ZEN4100 which is commercially available from NIPPON ZEON CO., LTD. consists of halogenated polystyrene as a main polymer and two kinds of radical captures. Those radical captures bring good edge roughness of patterns on reticle. Because those radical captures trap electrons which travel in unexposed area to crete latent images in accordance with design data. As described in previous paper, the amount of those radical captures is deeply related to CD variation. This means those additives suppress to generate the scum and tails of resist patterns. After researching new radical captures, we found a new resist designed for use in mass production. As a result, no change in the composition of chemicals has been observed for more than six months.

Paper Details

Date Published: 1 September 1998
PDF: 5 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328821
Show Author Affiliations
Noriyuki Mitao, Nippon Zeon Co., Ltd. (Japan)
Nobunori Abe, Nippon Zeon Co., Ltd. (Japan)
Masahiko Sugimura, Nippon Zeon Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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