Share Email Print

Proceedings Paper

Further advances in electron-beam pattern generation technology for 180-nm masks
Author(s): Frank E. Abboud; Charles A. Sauer; Matthew Vernon; Thomas P. Coleman; Robert L. Dean; William Wang; Richard Prior; Maiying Lu; Suzanne Weaver
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The technology in use in today's mask shop may not be adequate to meet 180 nm production requirements. In particular, requirements for linewidth control, linewidth uniformity, and registration are tightening at a breakneck pace. In the past, incremental improvements to registration and linewidth have been adequate to keep pace with steadily evolving mask requirements. This paradigm of continuous incremental improvement is not longer a valid model. Mask writers are needed that can deliver a higher dose to support advanced resists for superior critical dimension (CD) control, write faster to compensate for shrinking device sizes, and incorporate advanced calibration and error control schemes to improve placement accuracy. This paper describes key electron-beam pattern generation activities necessary to meet 180 nm mask requirements. This includes testing and implementation of multipass graybeam to improve throughput at lower addresses without compromising lithography quality, a new resist and process capable of supporting dry etching, and a data path capable of supporting addressing to 10 nm. Multipass gray (MPG) writing strategy was introduced with the MEBES 4500S. The ability to deliver a 4X improvement in dose while improving throughput is a significant advantage over previous MEBES systems. Because MPG is used in conjunction with offset scan voting, improvements in registration performance and a reduction in butting of over 50 percent have been demonstrated. Some of the process improvements attributed to a high dose mask writer are also documented in this paper. CD uniformity improvements with ZEP 7000 and dry etch at a 720 nm nominal feature size and smaller are also discussed in some detail.

Paper Details

Date Published: 1 September 1998
PDF: 13 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328815
Show Author Affiliations
Frank E. Abboud, Etec Systems, Inc. (United States)
Charles A. Sauer, Etec Systems, Inc. (United States)
Matthew Vernon, Etec Systems, Inc. (United States)
Thomas P. Coleman, ETEC Systems, Inc. (France)
Robert L. Dean, Etec Systems, Inc. (United States)
William Wang, Etec Systems, Inc. (United States)
Richard Prior, Etec Systems, Inc. (United States)
Maiying Lu, Etec Systems, Inc. (United States)
Suzanne Weaver, Etec Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

© SPIE. Terms of Use
Back to Top