Share Email Print

Proceedings Paper

Two-step etching process for small-size pattern
Author(s): Kenny Yang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

When pattern size on the mask is getting smaller, wet etching can not control the CD well enough and it is also difficult to add CD bias by using wet etch, especially at the contact layer. Dry etching process is therefore used to meet these requirements. This paper is to report the problems we have encountered during the development of dry etching process and to introduce a two-step, wet then dry etching process, which we used to solve these problems.

Paper Details

Date Published: 1 September 1998
PDF: 4 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328812
Show Author Affiliations
Kenny Yang, Taiwan Mask Corp. (Taiwan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

© SPIE. Terms of Use
Back to Top