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Proceedings Paper

Chemical-amplification positive-resist design for 0.18-μm reticle fabrication using the 50-kV HL-800M electron-beam system
Author(s): Tadashi Arai; Toshio Sakamizu; Takashi Soga; Hidetoshi Satoh; Kohji Katoh; Hiroshi Shiraishi; Morihisa Hoga
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Paper Abstract

We have developed a novolak-based chemical-amplification resist for 0.18-micrometers reticle fabrication. This resist prevents resist footing on a chromium-oxide (CrOx) substrate by use of a matrix resin whose molecular-weight distribution is controlled. With the resist, we could fabricate 0.8-micrometers line-and-space patterns on a CrOx substrate at a dose of 6.0 (mu) C/cm2. Under the dry-air condition, the line-width change was less than 10 nm when the delay between e-beam exposure and post-exposure-baking was from 0.5 to 6 hours. When plates of the resist coating were in a chemical filter testing box under the dry-air condition, the resist sensitivity was preserved for 7 days.

Paper Details

Date Published: 1 September 1998
PDF: 6 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328800
Show Author Affiliations
Tadashi Arai, Hitachi, Ltd. (Japan)
Toshio Sakamizu, Hitachi, Ltd. (Japan)
Takashi Soga, Hitachi, Ltd. (Japan)
Hidetoshi Satoh, Hitachi, Ltd. (Japan)
Kohji Katoh, Hitachi Chemical Co., Ltd. (Japan)
Hiroshi Shiraishi, Hitachi, Ltd. (Japan)
Morihisa Hoga, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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