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Proceedings Paper

Process optimization for mask fabrication
Author(s): Hideaki Sakurai; Masamitsu Itoh; Akitoshi Kumagae; Hirohito Anze; Takayuki Abe; Iwao Higashikawa
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Paper Abstract

Recently, next-generation mask fabrication processes have been actively examined for application with Electron Beam writing tools and chemically amplified resists. In this study, we used a variable shaped electron beam writing system with an accelerating voltage and chemically amplified resist to investigate the dependence of the CD error in a localized area of a 6025 mask on the process factors, with the goal of fabricating more accurate masks with improving sensitivity. Our results indicated that CD error in a localized area did not depend on the resist thickness. Higher sensitivity and CD uniformity were achieved simultaneously. Moreover, we could isolate the CD error caused by the resist heating effect is more apparent for higher doses than lower doses. However, a higher dose gives rise to a small CD change rate. In this experiment, the effect of the lower CD change rate at a higher dose counterbalances the resist heating effect. By decreasing CD error in a localized area, we obtained a CD uniformity of 14 nm in a 100 mm area on the mask.

Paper Details

Date Published: 1 September 1998
PDF: 7 pages
Proc. SPIE 3412, Photomask and X-Ray Mask Technology V, (1 September 1998); doi: 10.1117/12.328799
Show Author Affiliations
Hideaki Sakurai, Toshiba Microelectronics Engineering Lab. (Japan)
Masamitsu Itoh, Toshiba Mircoelectronics Engineering Lab. (Japan)
Akitoshi Kumagae, Toshiba Microelectronics Engineering Lab. (Japan)
Hirohito Anze, Toshiba Advanced Semiconductor Device Lab. (Japan)
Takayuki Abe, Toshiba Advanced Semiconductor Device Lab. (Japan)
Iwao Higashikawa, Toshiba Microelectronics Engineering Lab. (Japan)


Published in SPIE Proceedings Vol. 3412:
Photomask and X-Ray Mask Technology V
Naoaki Aizaki, Editor(s)

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