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Proceedings Paper

Mid-IR light emitting diodes using InAs, InAs1-yPxSby epilayers on InAs (100)
Author(s): Nelson L. Rowell; Tomuo Yamaguchi; X. Y. Gong; Hirofumi Kan
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Paper Abstract

The development of mid-infrared optoelectronic emitters and detectors is important for long-wave photonic applications. We report mid-IR emission spectra for three types of narrow- gap III-V light emitting diodes consisting of n-/p-InAs homojunctions and of n-InAs1-ySby/p-InAs1-ySby, and n-InAs/p-InAs1-x-yPxSby heterojunctions all grown by liquid phase epitaxy on InAs (100) substrates. Spectra were obtained under forward bias for photon energies between 300 and 425 meV (4.1 - 2.9 micrometers ), temperatures from 5 to 292 K, and bias currents from 20 (mu) A to 12 mA. Comparison are made with photoluminescence spectra from similar material.

Paper Details

Date Published: 4 December 1998
PDF: 6 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328742
Show Author Affiliations
Nelson L. Rowell, National Research Council Canada (Canada)
Tomuo Yamaguchi, Shizuoka Univ. (Japan)
X. Y. Gong, Hamamatsu Photonics K.K. (Japan)
Hirofumi Kan, Hamamatsu Photonics K.K. (Japan)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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