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Proceedings Paper

Modeling of the electrical derivative characteristic of InGaAsP multiple-quantum-well lasers
Author(s): Alain Champagne; Romain Maciejko; Toshihiko Makino
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Paper Abstract

A comprehensive semiconductor laser model is used to analyze the first electrical derivative characteristic of long wavelength MQW semiconductor lasers. It is found that the charge neutrality condition and the continuity of the quasi- Fermi levels, usually assumed in the rate equation approach, need not be respected. The first electrical derivative characteristics of abrupt and GRINSCH MQW structures are presented. The effects of doping in the active region on the optical gain and on the first electrical derivative characteristic are also studied.

Paper Details

Date Published: 4 December 1998
PDF: 6 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328731
Show Author Affiliations
Alain Champagne, Ecole Polytechnique (Canada)
Romain Maciejko, Ecole Polytechnique (Canada)
Toshihiko Makino, Nortel Technology (Canada)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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