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Proceedings Paper

Light emission from silicon nanometer-scale diode antifuses
Author(s): V. E. Houtsma; J. Holleman; V. Zieren; P. H. Woerlee
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Paper Abstract

Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.

Paper Details

Date Published: 4 December 1998
PDF: 5 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328725
Show Author Affiliations
V. E. Houtsma, Univ. of Twente (Netherlands)
J. Holleman, Univ. of Twente (Netherlands)
V. Zieren, Philips Research Labs. (Netherlands)
P. H. Woerlee, Univ. of Twente and Philips Research Lab.s (Netherlands)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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