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Proceedings Paper

Carrier dynamics in InGaAsP MQW laser structures
Author(s): C. Rejeb; Romain Maciejko; D. Morris; Toshihiko Makino
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Paper Abstract

We investigate vertical carrier transport, carrier relaxation and capture in three In1-xGaxAsyP1-y multiple-quantum-well lasers structures emitting at 1.3 and 1.55 micrometers at room temperature using time resolved photoluminescence. In the initial regime following the excitation, high effective carrier temperatures Tc different from the lattice temperature TL equals 77 K are reported. A significant signature of transport and capture is observed with characteristic times of approximately 10 ps and approximately 12 ps respectively.

Paper Details

Date Published: 4 December 1998
PDF: 6 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328680
Show Author Affiliations
C. Rejeb, Ecole Polytechnique (Canada)
Romain Maciejko, Ecole Polytechnique (Canada)
D. Morris, Univ. de Sherbrooke (Canada)
Toshihiko Makino, Nortel Technologie Inc. (Canada)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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