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Proceedings Paper

Study of photodegradation in II-VI heterostructures using n-i-n photoconductors
Author(s): Alexander N. Cartwright; Sundari Nagarathnam; E. H. Lee; H. Luo
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Paper Abstract

In this work, photo-degradation in ZnSe/Zn0.67Cd0.33Se multiple quantum well (MQW) structures was studied using photoluminescence of undoped structures and photocurrent of n-i-n photoconductors. The photoluminescence measurements were performed with respect to sample temperature, pump power and pump wavelength. The dependence of the measured photo-degradation from optical pumping on each of these parameters was quantified. To further understand this problem, n-i-n photoconductors were fabricated from these materials. Using these photoconductors, the formation of non-radiative recombination sites was monitored using standard photocurrent experiments. Moreover, the photocurrent generated was investigated as a function of applied voltage and excitation wavelength. The magnitude of the photocurrent decayed in a similar fashion to the photoluminescence measurements. Furthermore, n-i-n photoconductors fabricated from bulk material, as opposed to MQW structures, showed no evidence of photo-degradation. This implies that the photo- degradation is due to the interaction of the two constituent material systems.

Paper Details

Date Published: 4 December 1998
PDF: 5 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328679
Show Author Affiliations
Alexander N. Cartwright, SUNY/Buffalo (United States)
Sundari Nagarathnam, SUNY/Buffalo (United States)
E. H. Lee, SUNY/Buffalo (United States)
H. Luo, SUNY/Buffalo (United States)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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