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Proceedings Paper

Red AlGaInP lasers: tunable and powerful
Author(s): Heinz Schweizer; N. Lichtenstein; H. P. Gauggel; Justus Kuhn; R. Hofmann; R. Winterhoff; Christian Geng; A. Mortiz; Andreas Hangleiter; Ferdinand Scholz
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Paper Abstract

In this article fabrication techniques and the analysis of AlGaInP semiconductor lasers for single mode emission and high power emission will be reported. Special emphasis will be spent on the appropriate vertical and longitudinal device structures. Furthermore we discuss low damage dry etching and epitaxial regrowth of DFB laser structures. The devices investigated are DBR- DFB- and MOPA-lasers.

Paper Details

Date Published: 4 December 1998
PDF: 19 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328678
Show Author Affiliations
Heinz Schweizer, Univ. Stuttgart (Germany)
N. Lichtenstein, Univ. Stuttgart (Germany)
H. P. Gauggel, Univ. Stuttgart (Germany)
Justus Kuhn, Univ. Stuttgart (Germany)
R. Hofmann, Univ. Stuttgart (Germany)
R. Winterhoff, Univ. Stuttgart (Germany)
Christian Geng, Univ. Stuttgart (Germany)
A. Mortiz, Univ. Stuttgart (Germany)
Andreas Hangleiter, Univ. Stuttgart (Germany)
Ferdinand Scholz, Univ. Stuttgart (Germany)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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