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Proceedings Paper

Optical and structural characterization of nc-Si/a-SiO2 superlattices
Author(s): G. Grom; Leonid Tsybeskov; Karl D. Hirschman; Philippe M. Fauchet; Mario Zacharias; Thomas N. Blanton; John P. McCaffrey; Jean-Marc Baribeau; G. I. Sproule; H. J. Labbe; David J. Lockwood
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Paper Abstract

Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy, Auger elemental microanalysis (AEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 degree(s)C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals, possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

Paper Details

Date Published: 4 December 1998
PDF: 6 pages
Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328605
Show Author Affiliations
G. Grom, Univ. of Rochester (United States)
Leonid Tsybeskov, Univ. of Rochester (United States)
Karl D. Hirschman, Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)
Mario Zacharias, Otto-von-Guericke Univ. (Germany)
Thomas N. Blanton, Eastman Kodak Co. (United States)
John P. McCaffrey, National Research Council Canada (Canada)
Jean-Marc Baribeau, National Research Council Canada (Canada)
G. I. Sproule, National Research Council Canada (Canada)
H. J. Labbe, National Research Council Canada (Canada)
David J. Lockwood, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 3491:
1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications
George A. Lampropoulos; Roger A. Lessard, Editor(s)

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