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Proceedings Paper

Optical characterization of graphitized layers in ion-implanted diamond
Author(s): R. A. Khmelnitskiy; V. A. Dravin; S. D. Tkachenko; A. A. Gippius
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Paper Abstract

Optical interference studies of graphitized layers formed in diamond by ion bombardment and annealing provided the data on the depth and the thickness of the layers as well as their optical parameters. The latter were found to be close to those of dispersed graphite. Cathodoluminescence analysis of diamond samples implanted with fluences below and above the threshold of formation of the graphitized layer has shown that the conditions of formation and/or properties of the optical centers in the area with the buried graphite layer are different form those in the area without the layer which might to be due to the considerable tension in the part of the crystal between the surface and the buried graphitized layer.

Paper Details

Date Published: 20 October 1998
PDF: 8 pages
Proc. SPIE 3484, Lasers in Synthesis, Characterization, and Processing of Diamond, (20 October 1998); doi: 10.1117/12.328208
Show Author Affiliations
R. A. Khmelnitskiy, P.N. Lebedev Physical Institute (Russia)
V. A. Dravin, P.N. Lebedev Physical Institute (Russia)
S. D. Tkachenko, P.N. Lebedev Physical Institute (Russia)
A. A. Gippius, P.N. Lebedev Physical Institute (Russia)

Published in SPIE Proceedings Vol. 3484:
Lasers in Synthesis, Characterization, and Processing of Diamond
Vitali I. Konov; Victor G. Ralchenko, Editor(s)

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