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Proceedings Paper

Enhanced field emission characteristics from nanocrystalline diamond films through UV laser post-growth modification
Author(s): M. V. Ugarov; V. P. Ageev; A. V. Karabutov; E. N. Loubnin; Sergej M. Pimenov; Vitali I. Konov; Abdelhak Bensaoula
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Paper Abstract

A significant reduction of electron field emission thresholds resulting from ArF laser irradiation of nanocrystalline diamond films in borazine and ammonia atmospheres is reported for the first time. The change of emission characteristics is not connected with either laser surface graphitization or formation of bulk defects. XPS surface analysis and Raman spectroscopy data form these samples shows that laser irradiation results in the synthesis of ultra thin layers of boron-carbon-nitrogen and in B and N atoms intergrain penetration into the film to a depth above 100 angstrom. The synthesis of the B-C-N ternary and existence of sp2 bonded C-N compounds is demonstrated.

Paper Details

Date Published: 20 October 1998
PDF: 7 pages
Proc. SPIE 3484, Lasers in Synthesis, Characterization, and Processing of Diamond, (20 October 1998); doi: 10.1117/12.328200
Show Author Affiliations
M. V. Ugarov, General Physics Institute (Russia)
V. P. Ageev, General Physics Institute (Russia)
A. V. Karabutov, General Physics Institute (Russia)
E. N. Loubnin, General Physics Institute (Russia)
Sergej M. Pimenov, General Physics Institute (Russia)
Vitali I. Konov, General Physics Institute (Russia)
Abdelhak Bensaoula, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 3484:
Lasers in Synthesis, Characterization, and Processing of Diamond
Vitali I. Konov; Victor G. Ralchenko, Editor(s)

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