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Proceedings Paper

Nonlinear optical probes of nanoscale devices
Author(s): Keith Meyers; William Eugene Torruellas; Akira Otomo; Shinjo Mashiko; Pajo Vujkovic-Cvijin
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Paper Abstract

New developments in the semiconductor industry are driven by two trends: reducing the device dimensions and further increase of the switching speeds or electrical bandwidths. The electronics industry average feature sizes of integrated circuits (ICs) will be of the order of 100 nm by the year 2010. For instance, currently produced MOS field-effect transistors support electrical fields between the source and the drain that are greater than 105 V/micrometer with switching speeds of 10 - 100 psec. Techniques which would resolve such electrical fields, with the appropriate resolutions in time and in space, are of paramount interest both at the industrial level and in basic research. Initial experiments performed on samples consisting of two metallic electrodes deposited on fused silica substrates covered by thin polymer films show that with only 1 (mu) W of average optical power, a second harmonic signal triggered by an AC/DC field could easily be detected with a spatial resolution of less than 1 micrometer. We anticipate electrical field detection sensitivity of less than 1 mV/micrometer with our technique with 100 nm resolution spatially and less than 1 psec resolution in time.

Paper Details

Date Published: 16 October 1998
PDF: 12 pages
Proc. SPIE 3473, Third-Order Nonlinear Optical Materials, (16 October 1998); doi: 10.1117/12.328186
Show Author Affiliations
Keith Meyers, Washington State Univ (United States)
William Eugene Torruellas, Washington State Univ (United States)
Akira Otomo, Kansai Advanced Research Ctr. (Japan)
Shinjo Mashiko, Kansai Advanced Research Ctr. (Japan)
Pajo Vujkovic-Cvijin, Los Gatos Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3473:
Third-Order Nonlinear Optical Materials
Mark G. Kuzyk, Editor(s)

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