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Proceedings Paper

HgCdTe-based quantum device nanofabrication
Author(s): C. H. Lee; Jung B. Choi; J. S. Yook; S. J. Lee; K. W. Park; Soo Ho Bae; Hee Chul Lee; Choong-Ki Kim; Tae Won Kang; Jin-Ki Hong; Sun-Ung Kim; Mann-Jang Park
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Paper Abstract

We have made nanoscale fabrication for HgCdTe-based Coulomb blockade type quantum devices. Using e-beam lithography and lift-off technique with ZEP resist, multi-lines with 0.1/0.3 nm width and space were nano-patterned on ZnS/HgCdTe surface. SEM and AFM images for the lines display well-splitted patterning result with a little roughing ZnS surface. Split- gate of 200 nm radius was also fabricated on ZnS/MCT for defining nanosize quantum dot. All the work will provide a fundamental basis for the nanofabrication process of HgCdTe- based narrow-gap quantum devices.

Paper Details

Date Published: 26 October 1998
PDF: 5 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328073
Show Author Affiliations
C. H. Lee, Chungbuk National Univ (South Korea)
Jung B. Choi, Chungbuk National Univ (South Korea)
J. S. Yook, Korea Electronics and Telecommunications Research Institute (South Korea)
S. J. Lee, Korea Electronics and Telecommunications Research Institute (South Korea)
K. W. Park, Korea Electronics and Telecommunications Research Institute (South Korea)
Soo Ho Bae, Korea Advanced Institute of Science and Technology (South Korea)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)
Choong-Ki Kim, Korea Advanced Institute of Science and Technology (South Korea)
Tae Won Kang, Dongguk Univ. (South Korea)
Jin-Ki Hong, Korea Univ. (South Korea)
Sun-Ung Kim, Korea Univ. (South Korea)
Mann-Jang Park, Korea Univ. (South Korea)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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