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Proceedings Paper

Two-dimensional numerical simulation of HgCdTe infrared detectors
Author(s): Nam Hong Jo; Sang Dong Yoo; B. G. Ko; Seok Woo Lee; J. Jang; S. D. Lee; Kae Dal Kwack
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Paper Abstract

In this paper we introduce a new HgCdTe 2-dimensional numerical simulator, HanYang university SEmiconductor DEvice Simulator (HYSEDES). The modified transport models are included to describe the inherent natures of HgCdTe such as the degeneracy,the nonparabolic conduction band, and the band offset at heterointerface. It also takes into account various generation-recombination mechanisms regarding tunneling phenomena. For the advanced devices employing multiple junction, all the material parameters are described as a function of the position. The simulations are performed for some devices such as photo-voltaic devices and two color detectors to prove the validity of the overall models in the simulator and its capability.

Paper Details

Date Published: 26 October 1998
PDF: 11 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328063
Show Author Affiliations
Nam Hong Jo, Hyundai Electronics Industries Co. (South Korea)
Sang Dong Yoo, Hanyang Univ. (South Korea)
B. G. Ko, Hanyang Univ. (South Korea)
Seok Woo Lee, Hanyang Univ. (South Korea)
J. Jang, Hanyang Univ. (South Korea)
S. D. Lee, Wonju National Junior College (South Korea)
Kae Dal Kwack, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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