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Proceedings Paper

Electron mobility modeling in HgCdTe
Author(s): Sang Dong Yoo; Nam Hong Jo; B. G. Ko; Jae Seup Rho; S. D. Lee; Kae Dal Kwack
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Paper Abstract

As HgCdTe technology has been advanced, HgCdTe photodetectors is realized in many application areas. Carrier mobility is one of the most fundamental parameters affecting current-voltage characteristics of the devices. In the conventional simulations the empirical mobility model is used which lacks generality. Especially, the field dependent mobility is found to be wrong by comparing Monte Carlo results. The semi- empirical electron mobility model for the simulator is proposed in this paper. Low field mobility is calculated using the relaxation time approximation, which provides information on the dominant factors affecting the mobility. The ionized impurity model is modified based on Brooks-Herring model to consider the degeneracy effect and overlap integral. For field dependent mobility, a new formula is proposed to take into account features of the dominant scattering mechanism such as nonparabolic relation between energy and wave function at high field. Final formula is accomplished by introducing fitting parameters extracted from Monte Carlo simulation results. The new model retains more physical meaning than conventional model and fits well with experimental data.

Paper Details

Date Published: 26 October 1998
PDF: 9 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328052
Show Author Affiliations
Sang Dong Yoo, Hanyang Univ. (South Korea)
Nam Hong Jo, Hyundai Electronics Industries Co. (South Korea)
B. G. Ko, Hanyang Univ. (South Korea)
Jae Seup Rho, Hanyang Univ. (South Korea)
S. D. Lee, Wonju National Junior College (South Korea)
Kae Dal Kwack, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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