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Proceedings Paper

Latest improvements in QWIP technology at Thomson-CSF/LCR
Author(s): Eric M. Costard; Philippe Francis Bois; Francis Audier; Eric Herniou
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Paper Abstract

A novel architecture for both QWIP heterostructure and pixel design is described. This new approach completely eliminates the dark current of a conventional GaAs/GaAlAs multiple quantum well LWIR detector. The concept is first described, then the industrial feasibility is demonstrated on a 4 X 2 array with 50 micrometer pixel pitch. The performance modeling of FPA based on this new design shows that NETD as low as 15 mK is achievable at an operating temperature of 90 K and for arrays with 30 micrometer pitch.

Paper Details

Date Published: 26 October 1998
PDF: 12 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328018
Show Author Affiliations
Eric M. Costard, Thomson-CSF (France)
Philippe Francis Bois, Thomson-CSF (France)
Francis Audier, Thomson-CSF Optronique (France)
Eric Herniou, Thomson-CSF Optronique (France)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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