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Proceedings Paper

Ultrathin Ir3Si4 silicide films for infrared detection
Author(s): Karl-Martin Mahlein; Dieter Woerle; Thomas Hierl; Max J. Schulz
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Paper Abstract

A novel silicide phase Ir3Si4 suitable for medium wave infrared (MWIR, (lambda) equals 3 micrometer - 5 micrometer) detection was prepared and characterized. Iridium is deposited on p-Si(100) substrates at various temperatures in the range from 420 degrees Celsius to 485 degrees Celsius under ultrahigh vacuum conditions. The metallic phase is formed by interdiffusion and reaction of Ir and Si. The phase is identified to Ir3Si4 by Rutherford backscattering spectrometry. Ir3Si4 films thinner than 10 nm show Schottky barrier heights as low as (Phi) Ph equals 165 meV for photoemission into the Si valence band. Dark current densities are measured to jR less than 1 (DOT) 10-9 A cm-2 (at reverse bias 5 V and detector operation temperature 50 K). The infrared test detectors exhibit responsivities (lambda equals 4 micrometer) of up to 20 mA W-1 at 5 V. The temperature resolution of the test detectors -- front illuminated and without antireflection coating and optical resonator -- is improved to a noise equivalent temperature difference NETD300K approximately equals 53 mK (at 50 Hz) compared to 75 mK of equivalent test detectors fabricated by common HV-PtSi deposition.

Paper Details

Date Published: 26 October 1998
PDF: 10 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328009
Show Author Affiliations
Karl-Martin Mahlein, Bavarian Ctr. for Applied Energy Research (Germany)
Dieter Woerle, Univ. of Erlangen-Nuremberg (Germany)
Thomas Hierl, Bavarian Ctr. for Applied Energy Research (Germany)
Max J. Schulz, Bavarian Ctr. for Applied Energy Research and Univ. of Erlangen-Nuremberg (Germany)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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