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Proceedings Paper

New design structure of a direct-injection input circuit with adaptive gain control techniques
Author(s): Yuan Lung Chin; Tai Ping Sun; Wen Yaw Chung; Jung Chuan Chou; Shen Kan Hsiung
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Paper Abstract

Based on the application of the direct injection for per detector (DI) input technique, a new readout structure for the infrared (IR) focal-plane-array (FPA), called the variable gain direct inject per detector (VGDI) is proposed and analyzed. The readout circuit of VGDI of a unit cell of photo- voltaic sensor under investigation, is composed of a direct inject per detector circuit, high gain amplifier, and the reset switch. The VGDI readout chip has been designed in 0.5 micrometer double-poly-double-metal (DPDM) n-well CMOS technology in various formats from 8 X 8 to 128 X 128. The simulation 8 X 8 VGDI of the readout chip have successfully verified both the readout function and performance. The high gain, low power, high sensitivity readout performances are achieved in a 50 X 50 micrometer2 pixel size.

Paper Details

Date Published: 26 October 1998
PDF: 9 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328008
Show Author Affiliations
Yuan Lung Chin, Chung Yuan Christian Univ. (Taiwan)
Tai Ping Sun, Chung-Yu Junior College of Business and Administration (Taiwan)
Wen Yaw Chung, Chung Yuan Christian Univ. (Taiwan)
Jung Chuan Chou, National Yunlin Institute of Technology (Taiwan)
Shen Kan Hsiung, Chung Yuan Christian Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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