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Proceedings Paper

Characterization of deep levels in a mesa-type HgCdTe IR detector
Author(s): Junya Yoshino; Jun Morimoto; Hideo Wada; Akira Ajisawa; Masaya Kawano; Naoki Oda
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Paper Abstract

The relationships between the figure of merit R0A representing the junction property and deep levels representing electric properties of semiconductors have been investigated. R0A can be estimated by current-voltage (I- V) measurements. Deep levels can be estimated using spectral analysis of deep level transient spectroscopy (SADLTS). It has been confirmed that values of activation energies concentrate around 30 meV with the increase of R0A. This suggests that the influence from the inherent deep levels in the HgCdTe device becomes strong due to the increase of R0A, resulting in the improvement of the diode characteristics.

Paper Details

Date Published: 26 October 1998
PDF: 9 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328007
Show Author Affiliations
Junya Yoshino, National Defense Academy (Japan)
Jun Morimoto, National Defense Academy (Japan)
Hideo Wada, Japan Defense Agency (Japan)
Akira Ajisawa, NEC Corp. (Japan)
Masaya Kawano, NEC Corp. (Japan)
Naoki Oda, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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