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Proceedings Paper

Improvement of Hg0.78Cd0.22Te diode characteristics by hydrogenation
Author(s): Young-Ho Kim; Soo Ho Bae; Choong-Ki Kim; Hee Chul Lee
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Paper Abstract

Hg0.78Cd0.22Te n on p photovoltaic diodes were fabricated with the wafers grown by liquid-phase epitaxy on CdTe substrate which have a cutoff wavelength of 10.5 micrometer. The wafer was doped with Hg vacancies and the acceptor concentration was 5 X 1015 - 2 X 1016/cm3. We applied the planar ion-implantation technique for the junction formation. Post-implantation annealing was performed to improve reverse bias characteristics and RoA value. Using this method, we obtained RoA values of 2 - 8 (Omega) cm2 at 77 K. However, the increase of RoA by post-implantation annealing saturated as the annealing time increased further. This limit is thought to come from the low minority carrier lifetime in the Hg vacancy doped wafer. To improve the device performance further, we adapted the hydrogenation technique. The RoA of the hydrogenated diode was found to be 70 approximately 120 (Omega) cm2, which is one order of magnitude higher than that of the post-implantation annealed diode. From the model fitting analysis, the hydrogenation effect was attributed to the increase of the minority carrier lifetime.

Paper Details

Date Published: 26 October 1998
PDF: 6 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328004
Show Author Affiliations
Young-Ho Kim, Korea Advanced Institute of of Science and Technology and Korea Electronics Co. Ltd. (South Korea)
Soo Ho Bae, Korea Advanced Institute of Science and Technology (South Korea)
Choong-Ki Kim, Korea Advanced Institute of Science and Technology (South Korea)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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