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Proceedings Paper

Single-element photoconductive Hg0.79Cd0.21Te IR detector fabrications and their characteristics
Author(s): TaeHoon Kim; Myung-Soo Han; Min-Suk Jeoung; J. H. Kwon; Nam-Su Yim; Gyumg Suk Lee; Eui-Tae Kim; Suk-Ryong Hahn; H. C. Kwon; Y. Bin; Y. T. Jeoung; Jae Mook Kim
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Paper Abstract

Long wavelength infrared (LWIR) photoconductive (PC) detectors of single element Hg0.79Cd0.21Te (MCT) on sapphire substrate were fabricated, using three kinds of MCT etching processes, such as wet only, wet & dry mixed, and dry only process. The ohmic contact metals, which were used to the first contact layer in the IR detector fabrication, were Au, Ni, and Ti. The performance test of the fabricated IR detectors showed the good results in the wet etched MCT IR detectors with the detectivities (D*) of (1-3) X 1010 cmHz1/2W-1 and the responsivities of (2-3) X 104 VW-1 at field of view (FOV) of 180 degrees.

Paper Details

Date Published: 26 October 1998
PDF: 7 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328003
Show Author Affiliations
TaeHoon Kim, Korea Electronics Co. Ltd. (South Korea)
Myung-Soo Han, Korea Electronics Co. Ltd. (South Korea)
Min-Suk Jeoung, Korea Electronics Co. Ltd. (South Korea)
J. H. Kwon, Korea Electronics Co. Ltd. (South Korea)
Nam-Su Yim, Korea Electronics Co. Ltd. (South Korea)
Gyumg Suk Lee, Korea Electronics Co. Ltd. (South Korea)
Eui-Tae Kim, Korea Electronics Co. Ltd. (South Korea)
Suk-Ryong Hahn, Korea Electronics Co. Ltd. (South Korea)
H. C. Kwon, Korea Electronics Co. Ltd. (South Korea)
Y. Bin, Korea Electronics Co. Ltd. (South Korea)
Y. T. Jeoung, Agency for Defense Development (South Korea)
Jae Mook Kim, Agency for Defense Development (South Korea)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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