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Proceedings Paper

ECR Ar/CH4/H2 plasma damage in HgCdTe
Author(s): Eui-Tae Kim; Myung-Soo Han; J. H. Kwon; Suk-Ryong Hahn; Kyung Hun Song; Sang Gyu Lee; Tae-Seok Lee; Y. S. Lee; Jae Mook Kim
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Paper Abstract

The capacitance-voltage (C-V) and the Hall effect measurements were used, in order to study electron cyclotron resonance (ECR) plasma damage in HgCdTe (MCT). In this study using ECR treatments of MCT and C-V measurements, we observed that the type conversion of MCT surface largely depended on the ECR etching conditions, when MCT was etched by ECR plasma as a function of the ECR power and dc bias. The n-type conversion was not observed when the p-type MCT was etched under the condition of ECR power 150 W and dc bias -20 V. As dc bias of ECR increased over -40 V at the constant ECR power 150 W, the p-type MCT was converted to n-type. The p-type MCT was also converted to n-type when ECR power increased to 500 W at the constant dc bias -20 V. These results probably were due to the inter-diffusion of a large amount of excess mercury, liberated during the ECR treatment, into MCT, which were similar to the results of ion milling process. Another interesting result, observed in C-V measurements, was the p- type conversion from n-type MCT when the n-type MCT was etched under the condition of ECR power 150 W and dc bias -20 V. As dc bias of ECR increased over -40 V, the C-V curve was the results of n-type MCT characteristics. We considered that a low dc bias of -20 V, the hydrogen passivation and the deficiency of mercury in the etched surface were dominant and resulted in conversion to p-type. As dc bias increased over -40 V, the inter-diffusion of excess mercury into MCT was dominant and associated with keeping the n-type characteristics.

Paper Details

Date Published: 26 October 1998
PDF: 7 pages
Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); doi: 10.1117/12.328002
Show Author Affiliations
Eui-Tae Kim, Korea Electronics Co. Ltd. (South Korea)
Myung-Soo Han, Korea Electronics Co. Ltd. (South Korea)
J. H. Kwon, Korea Electronics Co. Ltd. (South Korea)
Suk-Ryong Hahn, Korea Electronics Co. Ltd. (South Korea)
Kyung Hun Song, Paichai Univ. (South Korea)
Sang Gyu Lee, Chungnam National Univ. (South Korea)
Tae-Seok Lee, Agency for Defense Development (South Korea)
Y. S. Lee, Agency for Defense Development (South Korea)
Jae Mook Kim, Agency for Defense Development (South Korea)


Published in SPIE Proceedings Vol. 3436:
Infrared Technology and Applications XXIV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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